unisonic technologies co., imt17 dual transistor www.unisonic.com.tw 1 copyright ? 2012 unisonic technologies co., qw-r215-006.b general purpose dual transistor ? features *two mmbt2907a chips in an smt package . *transistor elements are independent, eliminating interference. *high collector current. ic = -500ma ? equivalent circuits ? ordering information ordering number package pin assignment packing lead free halogen free 1234 5 6 imt17l-ag6 -r IMT17G-AG6-R sot-26 e1 b1 c2 e2 b2 c1 tape reel note: pin assignment: b: base c: collector e: emitter ? marking
imt17 dual transistor unisonic technologies co., ltd 2 www.unisonic.com.tw qw-r215-006.b ? absoluate maxium ratings* (ta = 25 ) parameter symbol ratings unit collector base voltage v cbo -60 v collector emitter voltage v ceo -50 v emitter base voltage v ebo -5 v collector current ic -500 ma power dissipation p d 300 mw* junction temperature t j +150 c storage temperature t stg -40 ~ +150 c *200mw per element must not be exceeded. ? electrical characteristics (ta= 25 , unless otherwise specified.) parameter symbol test conditions min typ max unit collector base breakdown voltage bv cbo ic = -100 a -60 v collector emitter breakdown voltage bv ceo ic = -1ma -50 v emitter base breakdown voltage bv ebo i e = -100 a -5 v collector emitter sa turation voltage v ce ( sat ) ic = -500ma, i b = -50ma -0.6 v collector cutoff current i cbo v cb = -30v -0.1 a emitter cutoff current i ebo v eb = -4v -0.1 a output capacitance cob v ce = -10v, i e =0a, f =1mhz 7 pf dc current transfer ratio h fe v ce = -3v, ic = -100ma 120 390 transition frequency f t v ce = -10v, i e =20ma, f =100mhz 200 mhz *measured using pulse current.
imt17 dual transistor unisonic technologies co., ltd 3 www.unisonic.com.tw qw-r215-006.b typical characterics -500 -200 -100 -50 -20 -10 -5 -2 -1 -0.5 -0.2 -0.1 0-0.2 -0.4-0.6 -0.8-1.0-1.2-1.4-1.6-1.8-2.0-2.2 collector current, i c (ma) base to emitter voltage, v be (v) grounded emitter propagaton characteristics ta = 100c ta = 25c ta = -40c v ce = -3v -100 -80 -60 -40 -20 0 0 -1 -2 -3 i b = 0a -4 -5 collector current, i c (ma) collector to emitter voltage, v ce (v) grounded emitter output characteristics (i) -1ma ta = 25c -0.1ma -0.2ma -0.3ma -0.4ma -0.5ma -0.6ma -0.7ma -0.8ma -0.9ma -500 0 0 -5 i b = 0a -10 collector current, i c (ma) collector to emitter voltage, v ce (v) grounded emitter output characteristics (ii) -1.0ma -1.5ma -0.5ma -5.0ma ta = 25c -2.0ma -2.5ma -3.0ma -3.5ma -4.0ma -4.5ma -400 -300 -200 -100 1000 500 200 100 50 12 510 0.5 20 50 transition frequency, f t (mhz) emitter current, i e (ma) gain bandwidth product vs. emitter current ta = 25c v ce = -5v 1000 500 200 100 50 20 -1 -2 -5 -10 -20 -50 -100-200 -500-1000 dc current gain, h fe collector current, i c (ma) dc current gain vs. collector current (i) ta = 25c v ce = -3v v ce = -1v v ce = -5v 1000 500 200 100 50 20 -1 -2 -5 -10 -20 -50 -100-200 -500-1000 dc current gain, h fe collector current, i c (ma) ta = 100c v ce = -3v ta = 25c ta = -40c dc current gain vs. collector current (ii)
imt17 dual transistor unisonic technologies co., ltd 4 www.unisonic.com.tw qw-r215-006.b ? typical characterics(cont.) collector saturation voltage, v ce (sat) (v) collector saturation voltage, v ce (sat) (v) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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